# ReMoC

**Repository Path**: jigroupruc/ReMoC

## Basic Information

- **Project Name**: ReMoC
- **Description**: 人大迁移率计算软件包(ReMoC)是基于第一性原理计算软件包``Vienna ab-initio Simulation Package (VASP)的输出结果，计算半导体载流子迁移率的软件包。Renmin Mobility Calculator (ReMoC) is a computer code for carrier mobility calculations of semiconductors based on outputs from computer package ``Vienna ab-initio Simulation Package (VASP).
- **Primary Language**: Python
- **License**: Not specified
- **Default Branch**: master
- **Homepage**: None
- **GVP Project**: No

## Statistics

- **Stars**: 9
- **Forks**: 6
- **Created**: 2019-08-12
- **Last Updated**: 2024-11-13

## Categories & Tags

**Categories**: Uncategorized

**Tags**: None

## README

# ReMoC

#### Description
Renmin Mobility Calculator (ReMoC) is a computer code for carrier mobility calculations of semiconductors based on outputs from computer package ``Vienna ab-initio Simulation Package (VASP). Here, the carrier mobility is calculated using the deformation potential theory for band transport solids which approximates that electrons are dominately scatterred by  long acoustic(LA) phonons. A crossover function is introduced to bridge exact 2D layer and 3D bulk-like materials, which leads to better descriptions for layered materials with finite thicknesses.

#### Environment Requirement

1. VASP **5.4.4** 
2. Python **3.x** 
3. numpy **>=1.12.1**

#### Installation

Please refer to the installation file.

#### Instructions

 Please refer to the fitmobility-guide file for first using.

 **For more  details please refer to following papers. And please cite them if you use this code to calculate carrier mobility.** 

1. the original form of exact 2D phonon-limited moblity:

High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus  
Jingsi Qiao, Xianghua Kong, Zhi-Xin Hu, Feng Yang, Wei Ji
Nature Communications  **5** , 4475 (2014)

2. the revised version bridging 2D and 3D materials:

Calculated carrier mobility of h-BN/γ-InSe/h-BN van der Waals heterostructures
P Kang, V Michaud-Rioux, X-H Kong, G-H Yu and H Guo 
2D Mater. 4, 045014  (2017) 

Few-layer Tellurium: one-dimensional like layered elementary semiconductor with striking physical properties
Jingsi Qiao, Yuhao Pan, Feng Yang, Cong Wang, Yang Chai and Wei Ji, *
Sci. Bull.   **63(3)**  , 159-168 (2018)

The current version is v0.1. If you need any assist for installation, usage and bug report, please scan the QR code shown below and contact us in the WeChat group.

![](http://sim.phys.ruc.edu.cn/upload/images/2019/2/2516421481.png "")